A naukri.com initiative
Brighter Side of News
1M
288
Image Credit: Brighter Side of News
Groundbreaking crystal oxide transistors are faster, smaller and more reliable than silicon
- Transistors are essential components in electronic devices, but traditional silicon-based transistors are facing limitations in terms of size and performance.
- Researchers at The University of Tokyo have developed a new type of transistor made from gallium-doped indium oxide, a crystalline oxide material that offers better electron mobility.
- The transistor features a 'gate-all-around' design, providing better control and performance compared to traditional transistors.
- By doping indium oxide with gallium, the researchers improved the material's stability and reliability.
- The transistor was constructed using atomic-layer deposition for precision and high electron mobility.
- It achieved a high mobility of 44.5 cm² per volt-second and demonstrated promising reliability under stress.
- This advancement opens doors for faster and more powerful electronic devices, especially in AI, data centers, and wearable technology.
- The shift from silicon to gallium-doped indium oxide signifies a new era in transistor design and performance.
- The development paves the way for more reliable, efficient, and sustainable electronic devices in the future.
- It showcases the importance of material science and innovative engineering in shaping the future of technology.
Read Full Article
17 Likes
For uninterrupted reading, download the app