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Breakthrough MRAM chips deliver faster, ultra-efficient computer memory
- Memory technology is advancing rapidly with Magnetoresistive Random Access Memory (MRAM) being a promising alternative to traditional memory systems due to its non-volatile nature and energy efficiency.
- A study introduced a novel electric-field-based approach to reduce energy consumption in MRAM, enhancing its practicality for low-power applications.
- The research team from Osaka University leveraged multiferroic heterostructures to achieve stable magnetization control using electric fields, significantly lowering energy requirements during data writing.
- The integration of vanadium in Co₂FeSi and a piezoelectric material boosted the efficiency of electric-field switching, leading to non-volatile binary states at zero electric field and a giant converse magnetoelectric effect.
- This breakthrough not only improves energy-efficient memory storage but also enhances the scalability and reliability of MRAM, making it compatible with existing CMOS technology and various electronic devices.
- The multiferroic MRAM technology paves the way for sustainable and high-capacity memory solutions, offering a transformative approach in spintronics for modern computing needs.
- The study highlights interdisciplinary collaboration and lays a foundation for future developments in reducing layer thickness, enhancing speed, and further minimizing power requirements in MRAM technology.
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