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China Unveils Poxiao: World’s Fastest Flash Memory Breaks Speed Barriers

  • Chinese researchers have developed Poxiao, the world's fastest flash memory device, capable of erasing and rewriting data in just 400 picoseconds.
  • This innovation narrows the gap between data storage and processing speeds, particularly in AI systems.
  • Poxiao achieves flash memory write speeds in hundreds of picoseconds, representing a speed increase of over 100,000 times compared to current technology.
  • The breakthrough has implications for faster AI systems, simplified storage architectures, compact mobile devices, and enhanced real-time data processing.

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