<ul><li>Researchers from Peking University in China have developed a silicon-free transistor based on two-dimensional bismuth oxyselenide using a gate-all-around architecture.</li><li>The new transistor design offers 10% less power consumption and 40% faster performance compared to the most recent 3 nm silicon chips from Intel, TSMC, and Samsung.</li><li>The bismuth oxyselenide transistor outperforms silicon in terms of switching speeds and power efficiency, making it a potential successor for ultra-high-performance applications.</li><li>The breakthrough in silicon-free transistors could revolutionize the chip industry by enabling smaller feature sizes and lower leakage, leading to increased global investment in 2D materials research.</li></ul>

China’s Silicon-Free Transistor Beats Intel, TSMC & Samsung

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