<ul><li>A new technical paper titled “Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental Characterization and Device-Level Studies” was published by researchers at ETH Zurich.</li><li>The paper attempts to align and cross-validate the real-chip experimental characterization results and device-level studies of DRAM read disturbance.</li><li>Inconsistencies are identified in the bitflip directions and access pattern dependence between experimental characterization results and the device-level error mechanisms.</li><li>The findings of the study may inspire future works to build a more comprehensive understanding of DRAM read disturbance.</li></ul>

Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance

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