<ul><li>Infineon Technologies AG has launched a new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, enhancing its GaN portfolio.</li><li>The new devices offer improved figures of merit, resulting in excellent efficiencies and a significant reduction in power loss compared to traditional silicon technology.</li><li>The CoolGaN Transistors 650 V G5 allow for high frequencies with minimal power loss, leading to superior power density.</li><li>The new product family includes a range of RDS(on) package combinations and is manufactured on high-performance 8-inch production lines.</li></ul>

Infineon launches new generation of GaN power discretes with superior efficiency and power density

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