<ul><li>Scientists at Oak Ridge National Laboratory have developed a method to arrange atoms in ferroelectric materials.</li><li>The technique allows for the creation of topological polarization structures that don't occur naturally.</li><li>These materials have unique electric properties and can be used for low-energy, high-speed electronics.</li><li>The discovery could lead to advancements in memory storage, computing, and communication technologies.</li></ul>

New nanoscale method boosts future memory storage and computing technologies

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