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ROHM’s New SiC Schottky Barrier Diodes for High Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance

  • ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) with improved insulation resistance.
  • The SBDs achieve 1.3 times the creepage distance compared to standard products.
  • They feature a unique package design that increases the minimum creepage distance to 5.1mm.
  • The SBDs are suitable for high-voltage applications in automotive and industrial equipment.

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