Scientists in Japan have developed a new kind of 'universal' computing memory that is faster and less energy-hungry.
The new memory, known as Magnetoresistive Random Access Memory (MRAM), offers higher speeds, greater capacity, and better endurance than conventional RAM.
Researchers have developed a new component for controlling the electric field in MRAM devices, reducing the energy required to switch polarity and improving processing speed.
The new MRAM technology could enable more powerful commercial computing and has a longer use life due to its energy efficiency and resilience.