<ul><li>UK-based semiconductor company Cambridge GaN Devices (CGD) has developed gallium nitride (GaN) technology that combines its ICeGaN HEMT integrated circuits (ICs) and Insulated-Gate Bipolar Transistors (IGBTs) in the same module for EV powertrain applications over 100 kW.</li><li>The Combo ICeGaN approach takes advangage of the fact that ICeGaN and IGBT devices can be operated in a parallel architecture. ICeGaN switch is highly efficient, offering a cost-effective alternative to silicon carbide (SiC) products.</li><li>At higher temperatures, the bipolar component of the IGBT starts to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current.</li><li>ICeGaN technology allows EV engineers to use GaN in DC-to-DC converters, on-board chargers, and potentially traction inverters. CGD's Combo ICeGaN is more economical than similar combinations with SiC MOSFETs.</li></ul>

CGD unveils 100 kW+ GaN technology for EV inverters

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