<ul><li>Researchers in China have developed a silicon-free transistor that could enhance performance and reduce energy consumption, potentially making chips up to 40% faster while using 10% less power.</li><li>The new transistor, a gate-all-around field-effect transistor (GAAFET), wraps the source with a gate on all four sides, providing better electrostatic control and higher drive currents.</li><li>By utilizing bismuth oxyselenide as the semiconductor in a two-dimensional design, the transistor offers improved carrier mobility and efficiency compared to traditional silicon transistors.</li><li>This breakthrough could allow China to surpass US chip technologies and navigate around restrictions on advanced chip purchases by adopting a different manufacturing approach.</li></ul>

China's '2D' chip could soon be used to make silicon-free chips

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