Researchers in China have created a new silicon-free transistor, with potential to make processors up to 40% faster while reducing energy consumption by 10%.
The new two-dimensional silicon-free transistor, called gate-all-around field-effect transistor (GAAFET), wraps the gate around all four sides of the source.
The unique architecture of the GAAFET transistor allows for better electrostatic control and potential improvements in performance and efficiency.
The use of bismuth oxyselenide as the semiconductor in the transistor enhances flexibility, carrier mobility, and energy efficiency.