<ul><li>A new technical paper titled “Coherent EUV scatterometry of 2D periodic structure profiles with mathematically optimal experimental design” was published by researchers at University of Colorado, NIST, Samsung, and KMLAbs.</li><li>EUV scatterometry is a crucial metrology method for measuring critical parameters of periodic nanostructured materials with high sensitivity to nanoscale structures and material composition.</li><li>The paper showcases the sensitivity of EUV scatterometry to out-of-plane features with single-nanometer sensitivity and discusses methodology to optimize experimental design parameters for maximizing measurement sensitivity.</li><li>The research aims to guide EUV scatterometry towards increased accuracy and throughput through a priori computations and leveraging new experimental capabilities for semiconductor devices and polymer metamaterials.</li></ul>

Demonstration Of EUV Scatterometry On A 2D Periodic Interconnect

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