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Driving the Future of Electric Mobility and Industrial Efficiency: Insights into STMicroelectronics’ 4th Generation SiC MOSFET Technology

  • STMicroelectronics has introduced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, delivering breakthroughs in power efficiency, density, and robustness for automotive and industrial applications.
  • The technology enhances energy efficiency and performance in both 400V and 800V platforms, driving the adoption of more affordable and sustainable electric vehicles.
  • STMicroelectronics’ new 750V and 1200V SiC MOSFET devices offer significant advancements for mid-size and compact electric vehicles, enhancing efficiency, reducing size and weight, increasing range, and enabling faster charging.
  • Solar inverters benefit from increased efficiency and higher power density, resulting in better energy conversion and more reliable solar power systems.
  • STMicroelectronics ensures a resilient supply chain for SiC components through its vertically integrated manufacturing strategy.
  • The company is investing in facilities like the Silicon Carbide Campus in Catania, a fully vertically integrated SiC substrate manufacturing facility, which is expected to start production in 2026.
  • The 4th generation SiC MOSFETs feature several key advancements over the previous generation, such as faster switching speeds, lower on-resistance, enhanced robustness, and smaller die size.
  • STMicroelectronics maintains full control over the entire production chain, from raw materials to finished products, and all initiatives are aligned with its sustainability strategy and sustainable manufacturing commitment.
  • The main goals for the 5th generation of SiC MOSFET include achieving higher power density, further reducing on-resistance, and improving thermal performance.
  • Leading EV manufacturers and Tier 1s are engaged with ST to integrate Generation 4 SiC technology into their vehicles and powertrain solutions.

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