STMicroelectronics has introduced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, delivering breakthroughs in power efficiency, density, and robustness for automotive and industrial applications.
The technology enhances energy efficiency and performance in both 400V and 800V platforms, driving the adoption of more affordable and sustainable electric vehicles.
STMicroelectronics’ new 750V and 1200V SiC MOSFET devices offer significant advancements for mid-size and compact electric vehicles, enhancing efficiency, reducing size and weight, increasing range, and enabling faster charging.
Solar inverters benefit from increased efficiency and higher power density, resulting in better energy conversion and more reliable solar power systems.
STMicroelectronics ensures a resilient supply chain for SiC components through its vertically integrated manufacturing strategy.
The company is investing in facilities like the Silicon Carbide Campus in Catania, a fully vertically integrated SiC substrate manufacturing facility, which is expected to start production in 2026.
The 4th generation SiC MOSFETs feature several key advancements over the previous generation, such as faster switching speeds, lower on-resistance, enhanced robustness, and smaller die size.
STMicroelectronics maintains full control over the entire production chain, from raw materials to finished products, and all initiatives are aligned with its sustainability strategy and sustainable manufacturing commitment.
The main goals for the 5th generation of SiC MOSFET include achieving higher power density, further reducing on-resistance, and improving thermal performance.
Leading EV manufacturers and Tier 1s are engaged with ST to integrate Generation 4 SiC technology into their vehicles and powertrain solutions.