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Improving DRAM Performance Using Dual Work-Function Metal Gate (DWMG) Structures
- DRAM technology faces challenges such as gate-induced drain leakage (GIDL) affecting standby charge loss.
- GIDL, caused by band-to-band tunneling under high electric field, escalates off-state leakage currents in DRAM cells, impacting memory retention times.
- Thinner gate oxides and higher doping concentrations exacerbate GIDL, posing a significant issue in low-power, high-density DRAM design.
- Dual work-function metal gate (DWMG) structures show promise in reducing GIDL by controlling the electric field along the channel in DRAM buried word-line (BWL).
- DWMG designs align with industry trends emphasizing advanced gate structures and have been successful in FinFETs and tunnel FETs for leakage reduction.
- Process integration modeling, like SEMulator3D, aids in evaluating DWMG effects by simulating full process flows and analyzing key electrical parameters.
- DWMG simulations reveal reduced current leakage due to a more relaxed electric field distribution and maintained device performance during read and write cycles.
- The combination of device electrical analysis and process integration modeling allows for advanced analyses like electrical pathfinding and variability assessments for optimal designs.
- Future research directions may involve integrating DWMG with high-k dielectrics, assessing scaling trends' impact, and developing predictive models for variability in advanced DRAM nodes.
- Overall, DWMG structures offer scalable solutions to mitigate GIDL in DRAM technology, holding promise for improved performance and reduced leakage currents.
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