<ul><li>Researchers at Samsung Electronics have developed an imaging spectroscopic reflectometry (ISR) method for detecting defects in the bottom region of high-aspect-ratio nanostructures.</li><li>ISR enables fast and non-destructive imaging of the bottom critical dimension (BCD) of channel holes (CHH) on a chip die of vertical NAND (V-NAND).</li><li>A supervised learning model is built to predict the BCD using hyperspectral imaging and deep learning, showing a high correlation with the actual BCD.</li><li>ISR can optimize the etch process for weak wafer edge regions and detect defective etch equipment.</li></ul>

Monitor Etch Defects on Dies in the Outer Regions Of The Wafer Using ISR

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