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Scientists discover high-temperature multiferroic, paving the way for next-gen electronics

  • Scientists at Tohoku University have discovered that terbium oxide (Tb₂(MoO₄)₃) remains functional even at 160°C.
  • This breakthrough could lead to more efficient electronic devices, such as low-power memory storage and advanced spintronics.
  • The key lies in activating the magnetoelectric effect at high temperatures, removing a major limitation of multiferroic materials.
  • Possible applications include spintronics, low-power memory storage, and advanced optical devices.

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