Scientists at Tohoku University have discovered that terbium oxide (Tb₂(MoO₄)₃) remains functional even at 160°C.This breakthrough could lead to more efficient electronic devices, such as low-power memory storage and advanced spintronics.The key lies in activating the magnetoelectric effect at high temperatures, removing a major limitation of multiferroic materials.Possible applications include spintronics, low-power memory storage, and advanced optical devices.