<ul><li>SK hynix introduces the world's first 321-layer UFS 4.1 TLC NAND flash for smartphones, which is faster, more efficient, and thinner.</li><li>The new storage chips offer 15% higher random read and 40% higher random write speeds compared to the previous generation with a max sequential read speed of 4.3GB/s.</li><li>The NAND package is 0.85mm thick, down from 1mm, making it suitable for slim phone designs like the Galaxy S25 Edge.</li><li>The 321-layer UFS 4.1 design is 7% more power efficient, contributing to improved performance and reduced heat generation, expected to be available in 512GB and 1TB capacities.</li></ul>

SK Hynix unveils 321-layer UFS 4.1 that is faster, thinner and more efficient than the previous gen

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